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8Gb C Die DRAM Memory Chip DDR4 SDRAM K4A8G165WC-BITD

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    Buy cheap 8Gb C Die DRAM Memory Chip DDR4 SDRAM K4A8G165WC-BITD from wholesalers
     
    Buy cheap 8Gb C Die DRAM Memory Chip DDR4 SDRAM K4A8G165WC-BITD from wholesalers
    • Buy cheap 8Gb C Die DRAM Memory Chip DDR4 SDRAM K4A8G165WC-BITD from wholesalers
    • Buy cheap 8Gb C Die DRAM Memory Chip DDR4 SDRAM K4A8G165WC-BITD from wholesalers
    • Buy cheap 8Gb C Die DRAM Memory Chip DDR4 SDRAM K4A8G165WC-BITD from wholesalers

    8Gb C Die DRAM Memory Chip DDR4 SDRAM K4A8G165WC-BITD

    Ask Lasest Price
    Brand Name : SAMSUNG
    Model Number : K4A8G165WC-BITD
    Certification : ROHS
    Price : CONSULT WITH
    Payment Terms : Western Union,T/T
    Supply Ability : 10000
    Delivery Time : 5-8DAY
    • Product Details
    • Company Profile

    8Gb C Die DRAM Memory Chip DDR4 SDRAM K4A8G165WC-BITD

    Dynamic Random Access Memory DRAM 8Gb C-die DDR4 SDRAM K4A8G165WC-BITD


    JEDEC standard 1.2V(1.14V-1.26V)
    VDDo = 1.2V(1.14V-1.26V)
    VPp=2.5V(2.375V-2.75V)
    800 MHz fek for 1600Mb/sec/pin, 933 MHz fek for 1866Mb/sec/pin,1067MHz fck for 2133Mbsec/pin, 1200MHz fck for 2400Mbsec/pin1333MHz fck for 2666Mbsec/pin, 1600MHz fck for 3200Mb/sec/pin
    8 Banks (2 Bank Groups)
    Programmable CAS Latency (posted CAS):
    10.11.12,13.14.15,16,17.18.19.20.22.24
    Programmable CAS Write Latency(CWL)=9,11 (DDR4-1600), 10,12(DDR4-1866),11,14 (DDR4-2133),12,16(DDR4-2400),14.18 (DDR4.2666)and 16.20(DDR4-3200)
    8-bit pre-fetch
    Burst Length: 8, 4 with tCCD = 4 which does not allow seamless read orwrite [either On the fiy using A12 or MRS]
    Bi-directional Differential Data-Strobe
    Internal (self) calibration: Internal self calibration through ZQ pin
    (RZQ: 240 ohm±1%)
    The 8Gb DDR4 SDRAM C-die is organized as a 64Mbit x 16 l/Os x 8banksdevice. This synchronous device achieves high speed double-data-ratetransfer rates of up to 3200Mbsecpin (DDR4-3200) for general applications.
    The chip is designed to comply with the following key DDR4 SDRAM features such as posted CAS, Programmable CWL, Internal (Self) Calibration,On Die Termination using ODT pin and Asynchronous Reset.
    All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the crosspoint of dif.ferential clocks (CK rising and CK falling). All l/Os are synchronized with apair of bidirectional strobes (DQS and DQS) in a source synchronous fash.ion. The address bus is used to convey row, column, and bank addressinformation in a RAS/CAS multiplexing style. The DDR4 device operateswith a single 1.2V(1.14V-1.26V)power supply, 1.2V(1.14V~1.26V) VDDOand 2.5V(2.375V-2.75V)VPP.
    The 8Gb DDR4 C-die device is available in 96ball FBGAs(x16)
    On Die Termination using ODT pin
    Average Refresh Period 7.8us at lower than TcAsE 85°C, 3.9us at 85°C <
    TCASE ≤ 95 °C
    Support industrial Temp (-40 ~ 95°C)-tREFI7.8us at -40°C≧TCASE ≤85°C-tREFI3.9us at 85“C<TCASE ≤ 95°CConnectivity Test Mode iTEN) is Supported
    Asynchronous Reset
    Package: 96 balls FBGA-x16
    All of Lead-Free products are compliant for RoHS
    All of products are Halogen-free
    CRC (Cyclic Redundancy Check) for Read'Write data security
    Command address parity check
    DBl (Data Bus Inversion)
    Gear down mode
    POD (Pseudo Open Drain) interface for data inputoutput
    Internal VREF for data inputs
    External PP for DRAM Activating Power
    PPR and sPPR is supported


    Product CatalogueMemory >Dynamic Random Access Memory DRAM
    Universal packagingFBGA-96
    RoHSCompliance
    Installation methodSurface mount installation
    Operating temperature-40~95°C
    Length * Width * Height 
    Application gradeIndustrial grade
    Packaging methodpallet
    Minimum working power supply voltage
    Organization 
    Data bus width
    Interface type
    Storage capacity512Mx16
    Maximum supply current
    Maximum working power supply voltage

    8Gb C Die DRAM Memory Chip DDR4 SDRAM K4A8G165WC-BITD

    8Gb C Die DRAM Memory Chip DDR4 SDRAM K4A8G165WC-BITD

    8Gb C Die DRAM Memory Chip DDR4 SDRAM K4A8G165WC-BITD

    Packaging and transportation instructions

    - According to the standard export packaging.

    Customers can choose from cartons, wooden cases and wooden pallets according to their own requirements.


    Q&A

    1. How to obtain the price?

    We usually quote within 24 hours after receiving your inquiry (except weekends and holidays). If you are in urgent need of a price, please send us an email or contact us in any other way so that we can provide you with a quotation.


    2. What is your delivery time?

    This depends on the quantity of the order and the season in which you place the order. Usually, we can ship the goods within 7 to 15 days (for small batches), and for large batches, it takes about 30 days.


    3. What are your payment terms?

    Factory price, 30% deposit, 70%T/T payment before shipment.


    4. What is the mode of transportation?

    It can be transported by sea, air or express delivery (EMS, UPS, DHL, TNT, FEDEX, etc.). Please confirm with us before placing an order.


    5. How do you help our business establish a long-term and good relationship?


    We maintain good quality and competitive prices to ensure that our customers benefit.


    2. We respect every customer as our friend. We do business with them sincerely and make friends with them, no matter where they come from.



    Quality 8Gb C Die DRAM Memory Chip DDR4 SDRAM K4A8G165WC-BITD for sale
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